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PD - 95353A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l HEXFET(R) Power MOSFET IRFR12N25DPBF IRFU12N25DPbF ID 14A VDSS 250V RDS(on) max 0.26 Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR12N25D I-Pak IRFU12N25D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 14 9.7 56 144 0.96 30 9.3 -55 to + 175 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. --- --- --- Max. 1.04 50 110 Units C/W Notes through are on page 10 www.irf.com 1 12/2/04 IRFR/U12N25DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 250 --- --- 3.0 --- --- --- --- Typ. --- 0.29 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.26 VGS = 10V, ID = 8.4A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 23 5.8 12 9.1 25 16 9.2 810 130 22 1100 50 130 Max. Units Conditions --- S VDS = 25V, ID = 8.4A 35 I D = 8.4A 8.7 nC VDS = 200V 19 VGS = 10V, --- VDD = 125V --- ID = 8.4A ns --- RG = 6.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 200V, = 1.0MHz --- VGS = 0V, VDS = 0V to 200V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 250 8.4 14 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 8.4A, VGS = 0V --- 140 --- ns TJ = 25C, IF = 8.4A --- 710 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U12N25DPbF 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 10 10 1 0.1 5.0V 1 5.0V 0.01 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 20s PULSE WIDTH Tj = 175C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 3.5 I D = 14A ID, Drain-to-Source Current () TJ = 175C RDS(on) , Drain-to-Source On Resistance 3.0 10.00 2.5 (Normalized) 2.0 1.00 T J = 25C 0.10 1.5 1.0 0.01 5.0 7.0 9.0 VDS = 15V 20s PULSE WIDTH 11.0 13.0 15.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U12N25DPbF 10000 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds VGS , Gate-to-Source Voltage (V) ID = 8.4A VDS = 200V VDS = 125V VDS = 50V 10 C, Capacitance(pF) 1000 Ciss 7 5 100 Coss 2 Crss 10 1 10 100 1000 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.00 T J = 175C 10.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100sec 1.00 T J = 25C 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1msec VGS = 0V 0.10 0.0 1.0 2.0 3.0 VSD, Source-toDrain Voltage (V) 10msec 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U12N25DPbF 15 V DS VGS RD 12 RG VGS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD I D , Drain Current (A) 9 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1 P DM t1 t2 J = P DM x Z thJC 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U12N25DPbF 15V 550 ID TOP 3.4A 5.9A 8.4A RG 20V D.U.T IAS tp + V - DD EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 440 BOTTOM 330 A 0.01 220 Fig 12a. Unclamped Inductive Test Circuit 110 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting T , Junction Temperature J ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V .2F 50K .3F QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U12N25DPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFR/U12N25DPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTE RNATIONAL RECT IFIER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFU120 12 34 DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S E MBLY S ITE CODE AS S EMBLY LOT CODE 8 www.irf.com IRFR/U12N25DPbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO IRF U120 919A 56 78 ASS EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEE K 19 LINE A OR INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 56 78 ASS EMBLY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = ASS EMBLY S ITE CODE www.irf.com 9 IRFR/U12N25DPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 7.1mH RG = 25, IAS = 8.4A. ISD 8.4A, di/dt 150A/s, VDD V(BR)DSS, TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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